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BDX53F BDX54F
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
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APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDX53F is a silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP types is BDX54F. TO-220
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INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 K
R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter NPN PNP
Value BDX53F BDX54F 160 160 5 8 12 0.2
o
Unit
V CBO V CEO V EBO IC I CM IB P tot T stg Tj July 1997
Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 C Storage Temperature Max. Operating Junction Temperature
V V V A A A W
o o
60 -65 to 150 150
C C 1/4
BDX53F / BDX54F
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.08 70
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEO I CBO I EBO
Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0)
Test Conditions V CB = 80 V V CB = 160 V V EB = 5 V I C = 50 mA
Min.
Typ.
Max. 0.5 0.2 5
Unit mA mA mA V
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) h FE VF hfe Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Parallel Diode Forward Voltage Small Signal Current Gain
160
IC = 2 A IC = 2 A IC = 2 A IC = 3 A IF = 2 A I C = 0.5 A f = 1MHz
I B =10 mA I B =10 mA V CE = 5 V V CE = 5 V 500 150
2 2.5
V V
2.5
V
V CE = 2 V
20
Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative.
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BDX53F / BDX54F
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
F1
D
G1
E
Dia. L5 L7 L6 L4
P011C
L9
F2
F
G
H2
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BDX53F / BDX54F
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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